金刚石压砧中的少数层MoS2的压力场效应晶体管外文翻译资料

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金刚石压砧中的少数层MoS2的压力场效应晶体管

Yabin Chen,dagger; Feng Ke,Dagger; Penghong Ci,dagger; Changhyun Ko,dagger; Taegyun Park,dagger; Sahar Saremi,dagger; Huili Liu,dagger;,sect; Yeonbae Lee,sect; Joonki Suh,dagger; Lane W. Martin,dagger; Joel W. Ager,dagger;,sect; Bin Chen,Dagger; and Junqiao Wu*,dagger;,sect;

dagger;Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States

Dagger;Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China

sect;Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

摘要：利用金刚石压砧(DAC)施加的静水压改变材料的晶格自由度来调节材料的物理性能。电场可以通过例如场效应晶体管的构造独立地调节功能材料电子自由度。将这两种正交方法结合起来，可以发现超出已知相空间的新的物理性质和相位。然而，这样的实验在技术上是有挑战性的，没有被证明。在此，我们报告了一种可行的策略，通过在金刚石立方体上刻划纳米器件，在DAC中制备和测量场效应晶体管。采用少层MoS2和BN作为沟道半导体和介电层，在DAC中制备了多端场效应晶体管。结果表明，压力能显著提高MoS2的迁移率、电导、载流子浓度和接触电导。我们期望这一方法能够以前所未有的方式探索耦合机械-静电调制下材料的新相和新性质。

关键词 静水压，金刚石压砧，MoS2，h-BN介质，场效应晶体管等。

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